SIRA20DP-T1-RE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.33 EUR |
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Technische Details SIRA20DP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 25V 81.7A/100A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +16V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIRA20DP-T1-RE3 nach Preis ab 1.06 EUR bis 3.22 EUR
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SIRA20DP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET N-CH 25V 81.7A/100A PPAKInput Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): +16V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIRA20DP-T1-RE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 81.7A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 81.7A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.22 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.06 EUR |