SIRA52ADP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/131A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 10+ | 2.69 EUR |
| 100+ | 2.09 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
7 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SIRA52ADP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/131A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc), Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V.
Weitere Produktangebote SIRA52ADP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SIRA52ADP-T1-RE3 | Vishay Semiconductors |
MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8 |
auf Bestellung 2136 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
SIRA52ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A Case: PowerPAK® SO8 Mounting: SMD Pulsed drain current: 200A Power dissipation: 30.7W Gate charge: 0.1µC Polarisation: unipolar Technology: TrenchFET® Drain current: 105A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: reel; tape On-state resistance: 2.3mΩ |
auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIRA52ADP-T1-RE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8
MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8
auf Bestellung 2136 Stücke:
Lieferzeit 10-14 Tag (e)
| SIRA52ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Case: PowerPAK® SO8
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 30.7W
Gate charge: 0.1µC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 105A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
On-state resistance: 2.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Case: PowerPAK® SO8
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 30.7W
Gate charge: 0.1µC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 105A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
On-state resistance: 2.3mΩ
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)