SIRA62DDP-T1-UE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 3.03 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.89 EUR |
| 3000+ | 0.84 EUR |
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Technische Details SIRA62DDP-T1-UE3 Vishay / Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150C, Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 5W (Ta), 71W (Tc), Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIRA62DDP-T1-UE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SIRA62DDP-T1-UE3 | Vishay Siliconix |
 Description: N-CHANNEL 30 V (D-S) MOSFET 150CInput Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIRA62DDP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) MOSFET 150C Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIRA62DDP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIRA62DDP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 30 V (D-S) MOSFET 150C
Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 191A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH