SIRA88BDP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.31 EUR |
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Technische Details SIRA88BDP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 17W (Tc), Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V.
Weitere Produktangebote SIRA88BDP-T1-GE3 nach Preis ab 0.25 EUR bis 1.01 EUR
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SIRA88BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 19A/40A PPAK SO8 Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA88BDP-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAKSO8 N-CH 30V 19A |
auf Bestellung 5948 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIRA88BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.37 EUR |
| SIRA88BDP-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs PPAKSO8 N-CH 30V 19A
MOSFETs PPAKSO8 N-CH 30V 19A
auf Bestellung 5948 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.01 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.26 EUR |
| 9000+ | 0.25 EUR |