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SIRC16DP-T1-RE3

SIRC16DP-T1-RE3 Vishay Siliconix


sirc16dp.pdf
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25-V (D-S) MOSFET W/SC
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.87 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIRC16DP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 25-V (D-S) MOSFET W/SC, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 5W (Ta), 54.3W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V.

Weitere Produktangebote SIRC16DP-T1-RE3 nach Preis ab 0.92 EUR bis 2.09 EUR

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SIRC16DP-T1-RE3 SIRC16DP-T1-RE3 Vishay Siliconix sirc16dp.pdf Description: N-CHANNEL 25-V (D-S) MOSFET W/SC
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
11+1.72 EUR
100+1.34 EUR
500+1.13 EUR
1000+0.92 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SIRC16DP-T1-RE3 sirc16dp.pdf
SIRC16DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25-V (D-S) MOSFET W/SC
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
11+1.72 EUR
100+1.34 EUR
500+1.13 EUR
1000+0.92 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH