| Anzahl | Privatkunde |
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| 10+ | 5.68 EUR |
| 100+ | 4.24 EUR |
| 500+ | 3.75 EUR |
| 3000+ | 3.17 EUR |
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Technische Details SIRS4300DP-T1-RE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 544A; Idm: 800A, Pulsed drain current: 800A, Power dissipation: 278W, Gate charge: 84nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: 544A, Kind of channel: enhancement, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: -16...20V, Kind of package: reel; tape, Case: PowerPAK® SO8, On-state resistance: 0.4mΩ, Mounting: SMD.
Weitere Produktangebote SIRS4300DP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SIRS4300DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 544A; Idm: 800A Pulsed drain current: 800A Power dissipation: 278W Gate charge: 84nC Polarisation: unipolar Technology: TrenchFET® Drain current: 544A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 0.4mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIRS4300DP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 544A; Idm: 800A
Pulsed drain current: 800A
Power dissipation: 278W
Gate charge: 84nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 544A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 0.4mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 544A; Idm: 800A
Pulsed drain current: 800A
Power dissipation: 278W
Gate charge: 84nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 544A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 0.4mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH