SIRS510DPW-T1-RE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.78 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.7 EUR |
| 1000+ | 2.51 EUR |
| 3000+ | 2.34 EUR |
| 6000+ | 2.14 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SIRS510DPW-T1-RE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 200A, Mounting: SMD, Pulsed drain current: 200A, Power dissipation: 171W, Gate charge: 32nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: 120A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PowerPAK® SO8, On-state resistance: 3.8mΩ.
Weitere Produktangebote SIRS510DPW-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SIRS510DPW-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 200A Mounting: SMD Pulsed drain current: 200A Power dissipation: 171W Gate charge: 32nC Polarisation: unipolar Technology: TrenchFET® Drain current: 120A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 3.8mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIRS510DPW-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 200A
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 171W
Gate charge: 32nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 3.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 200A
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 171W
Gate charge: 32nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 3.8mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH