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SIS176LDN-T1-GE3

SIS176LDN-T1-GE3 Vishay Siliconix

sis176ldn.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.64 EUR
6000+0.60 EUR
9000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIS176LDN-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 70 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc), Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V, Power Dissipation (Max): 3.6W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V.

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SIS176LDN-T1-GE3 SIS176LDN-T1-GE3 Hersteller : Vishay / Siliconix sis176ldn.pdf MOSFETs POWRPK N CHAN 70V
auf Bestellung 35519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.51 EUR
10+1.23 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.65 EUR
3000+0.58 EUR
6000+0.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIS176LDN-T1-GE3 SIS176LDN-T1-GE3 Hersteller : Vishay Siliconix sis176ldn.pdf Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
auf Bestellung 11837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.73 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIS176LDN-T1-GE3 Hersteller : VISHAY sis176ldn.pdf SIS176LDN-T1-GE3 SMD N channel transistors
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