SIS176LDN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS176LDN-T1-GE3 Vishay Siliconix
Description: VISHAY - SIS176LDN-T1-GE3 - N-CHANNEL 70-V (D-S) MOSFET, tariffCode: 85412900, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 70V, rohsCompliant: YES, Dauer-Drainstrom Id: 42.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 1.6V, Verlustleistung: 39W, SVHC: To Be Advised, Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: N Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 0.0109ohm, directShipCharge: 25.
Weitere Produktangebote SIS176LDN-T1-GE3 nach Preis ab 0.68 EUR bis 3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIS176LDN-T1-GE3 | Vishay / Siliconix |
MOSFETs POWRPK N CHAN 70V |
auf Bestellung 35519 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SIS176LDN-T1-GE3 | VISHAY |
Description: VISHAY - SIS176LDN-T1-GE3 - N-CHANNEL 70-V (D-S) MOSFET tariffCode: 85412900 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 70V rohsCompliant: YES Dauer-Drainstrom Id: 42.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 39W SVHC: To Be Advised Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: N Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.0109ohm directShipCharge: 25 |
auf Bestellung 5982 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SIS176LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 70 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V |
auf Bestellung 5570 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIS176LDN-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs POWRPK N CHAN 70V
MOSFETs POWRPK N CHAN 70V
auf Bestellung 35519 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.77 EUR |
| 3000+ | 0.69 EUR |
| 6000+ | 0.68 EUR |
| SIS176LDN-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIS176LDN-T1-GE3 - N-CHANNEL 70-V (D-S) MOSFET
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 70V
rohsCompliant: YES
Dauer-Drainstrom Id: 42.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 39W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.0109ohm
directShipCharge: 25
Description: VISHAY - SIS176LDN-T1-GE3 - N-CHANNEL 70-V (D-S) MOSFET
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 70V
rohsCompliant: YES
Dauer-Drainstrom Id: 42.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 39W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.0109ohm
directShipCharge: 25
auf Bestellung 5982 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 94+ | 2.68 EUR |
| 121+ | 1.93 EUR |
| 132+ | 1.63 EUR |
| 146+ | 1.48 EUR |
| 164+ | 1.31 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 0.95 EUR |
| 2500+ | 0.88 EUR |
| SIS176LDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
auf Bestellung 5570 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 12+ | 1.89 EUR |
| 100+ | 1.26 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.9 EUR |