SIS468DN-T1-GE3
Produktcode: 148149
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Weitere Produktangebote SIS468DN-T1-GE3 nach Preis ab 0.83 EUR bis 3.13 EUR
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SIS468DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 30A PPAK1212-8 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS468DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 80V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 4453 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS468DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 30A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
auf Bestellung 4695 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS468DN-T1-GE3 | VISHAY |
Description: VISHAY - SIS468DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 30 A, 0.0195 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.5V Verlustleistung: 52W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0195ohm |
auf Bestellung 37336 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIS468DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK1212-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 80V 30A PPAK1212-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.85 EUR |
| SIS468DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 80V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 80V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 4453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.9 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.92 EUR |
| 3000+ | 0.87 EUR |
| 6000+ | 0.83 EUR |
| SIS468DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 30A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 4695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.13 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.97 EUR |
| SIS468DN-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SIS468DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 30 A, 0.0195 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 52W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0195ohm
Description: VISHAY - SIS468DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 30 A, 0.0195 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 52W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0195ohm
auf Bestellung 37336 Stücke:
Lieferzeit 14-21 Tag (e)