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SIS862ADN-T1-GE3

SIS862ADN-T1-GE3 Vishay Siliconix

sis862adn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15.8A/52A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
auf Bestellung 2286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.20 EUR
19+0.95 EUR
100+0.73 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIS862ADN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 15.8A/52A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V.

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SIS862ADN-T1-GE3 SIS862ADN-T1-GE3 Hersteller : Vishay / Siliconix sis862adn.pdf MOSFETs POWRPK N CHAN 60V
auf Bestellung 83502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.94 EUR
10+1.27 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.65 EUR
3000+0.56 EUR
6000+0.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIS862ADN-T1-GE3 SIS862ADN-T1-GE3 Hersteller : Vishay Siliconix sis862adn.pdf Description: MOSFET N-CH 60V 15.8A/52A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIS862ADN-T1-GE3 SIS862ADN-T1-GE3 Hersteller : Vishay sis862adn.pdf Trans MOSFET N-CH 60V 15.8A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
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SIS862ADN-T1-GE3 Hersteller : VISHAY sis862adn.pdf SIS862ADN-T1-GE3 SMD N channel transistors
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