SIS862ADN-T1-GE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SIS862ADN-T1-GE3 - N-CHANNEL 60-V (D-S) MOSFET 42AJ0532
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 39W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0072ohm
directShipCharge: 25
| Anzahl | Privatkunde |
|---|---|
| 93+ | 2.7 EUR |
| 115+ | 2.03 EUR |
| 124+ | 1.74 EUR |
| 134+ | 1.61 EUR |
| 148+ | 1.45 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.14 EUR |
| 2500+ | 1.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS862ADN-T1-GE3 VISHAY
Description: VISHAY - SIS862ADN-T1-GE3 - N-CHANNEL 60-V (D-S) MOSFET 42AJ0532, tariffCode: 0, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 52A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.5V, Verlustleistung: 39W, SVHC: To Be Advised, Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: N Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0072ohm, directShipCharge: 25.
Weitere Produktangebote SIS862ADN-T1-GE3 nach Preis ab 0.7 EUR bis 2.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SIS862ADN-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAK1212 N-CH 60V 15.8A |
auf Bestellung 74881 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS862ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 15.8A/52A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V |
auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIS862ADN-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs PPAK1212 N-CH 60V 15.8A
MOSFETs PPAK1212 N-CH 60V 15.8A
auf Bestellung 74881 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.81 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.84 EUR |
| 3000+ | 0.74 EUR |
| 6000+ | 0.7 EUR |
| SIS862ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15.8A/52A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
Description: MOSFET N-CH 60V 15.8A/52A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 30 V
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 12+ | 1.76 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.83 EUR |