Technische Details SISA34DN-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 20.8W (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote SISA34DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SISA34DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 40A PPAK1212-8Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 20.8W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
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SISA34DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK1212-8 Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 20.8W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SISA34DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 30V 40A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SISA34DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Description: MOSFET N-CH 30V 40A PPAK1212-8
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH