SISHA14DN-T1-GE3 Vishay
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISHA14DN-T1-GE3 Vishay
Description: MOSFET N-CH 30V 19.7A/20A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V.
Weitere Produktangebote SISHA14DN-T1-GE3 nach Preis ab 0.32 EUR bis 1.47 EUR
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SISHA14DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 19.7A 8-Pin PowerPAK 1212-8SH EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SISHA14DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 19.7A/20A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V |
auf Bestellung 1834 Stücke: Lieferzeit 10-14 Tag (e) |
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SISHA14DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs PPAK1212 N-CH 30V 19.7A |
auf Bestellung 6703 Stücke: Lieferzeit 10-14 Tag (e) |
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SISHA14DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 19.7A 8-Pin PowerPAK 1212-SH EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SISHA14DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 19.7A 8-Pin PowerPAK 1212-8SH EP T/R |
Produkt ist nicht verfügbar |
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SISHA14DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 19.7A 8-Pin PowerPAK 1212-8SH EP T/R |
Produkt ist nicht verfügbar |
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SISHA14DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 19.7A/20A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V |
Produkt ist nicht verfügbar |