Produkte > VISHAY > SISS32DN-T1-GE3

SISS32DN-T1-GE3 VISHAY

Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Drain current: 50.3A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 8.7mΩ
Pulsed drain current: 150A
Power dissipation: 42W
Gate charge: 42nC
Polarisation: unipolar
Technology: TrenchFET®

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Technische Details SISS32DN-T1-GE3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A, Mounting: SMD, Kind of package: reel; tape, Drain current: 50.3A, Kind of channel: enhancement, Drain-source voltage: 80V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Case: PowerPAK® 1212-8, On-state resistance: 8.7mΩ, Pulsed drain current: 150A, Power dissipation: 42W, Gate charge: 42nC, Polarisation: unipolar, Technology: TrenchFET®.