SISS32DN-T1-GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.11 EUR |
| 10+ | 2.62 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.37 EUR |
| 3000+ | 1.25 EUR |
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Technische Details SISS32DN-T1-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A, Mounting: SMD, Kind of package: reel; tape, Drain current: 50.3A, Kind of channel: enhancement, Drain-source voltage: 80V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Case: PowerPAK® 1212-8, On-state resistance: 8.7mΩ, Pulsed drain current: 150A, Power dissipation: 42W, Gate charge: 42nC, Polarisation: unipolar, Technology: TrenchFET®.
Weitere Produktangebote SISS32DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SISS32DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Drain current: 50.3A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PowerPAK® 1212-8 On-state resistance: 8.7mΩ Pulsed drain current: 150A Power dissipation: 42W Gate charge: 42nC Polarisation: unipolar Technology: TrenchFET® |
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| SISS32DN-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Drain current: 50.3A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 8.7mΩ
Pulsed drain current: 150A
Power dissipation: 42W
Gate charge: 42nC
Polarisation: unipolar
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Drain current: 50.3A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 8.7mΩ
Pulsed drain current: 150A
Power dissipation: 42W
Gate charge: 42nC
Polarisation: unipolar
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH