SISS32DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 40 V
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Technische Details SISS32DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 40 V.
Weitere Produktangebote SISS32DN-T1-GE3 nach Preis ab 1.02 EUR bis 4.11 EUR
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SISS32DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 17.4A/63A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 40 V |
auf Bestellung 14702 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS32DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S |
auf Bestellung 31125 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS32DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 40 V
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 40 V
auf Bestellung 14702 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.27 EUR |
| 11+ | 2.08 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.02 EUR |
| SISS32DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S
MOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S
auf Bestellung 31125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.11 EUR |
| 10+ | 2.62 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.29 EUR |
| 3000+ | 1.25 EUR |