SISS63DN-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.36 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| 3000+ | 0.65 EUR |
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Technische Details SISS63DN-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 35.1/127.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.8W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V.
Weitere Produktangebote SISS63DN-T1-GE3 nach Preis ab 0.68 EUR bis 2.27 EUR
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SISS63DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 35.1/127.5A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V |
auf Bestellung 2733 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS63DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V
Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V
auf Bestellung 2733 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.27 EUR |
| 13+ | 1.44 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.68 EUR |