SISS63DN-T1-GE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SISS63DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 127.5 A, 0.0022 ohm, PowerPAK 1212-8S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 127.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 65.8W
Bauform - Transistor: PowerPAK 1212-8S
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0022ohm
SVHC: Lead (07-Nov-2024)
| Anzahl | Privatkunde |
|---|---|
| 108+ | 2.31 EUR |
| 131+ | 1.78 EUR |
| 185+ | 1.17 EUR |
| 500+ | 0.94 EUR |
| 1500+ | 0.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISS63DN-T1-GE3 VISHAY
Description: VISHAY - SISS63DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 127.5 A, 0.0022 ohm, PowerPAK 1212-8S, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 127.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.5V, euEccn: NLR, Verlustleistung: 65.8W, Bauform - Transistor: PowerPAK 1212-8S, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0022ohm, SVHC: Lead (07-Nov-2024).
Weitere Produktangebote SISS63DN-T1-GE3 nach Preis ab 0.77 EUR bis 2.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SISS63DN-T1-GE3 | Vishay Semiconductors |
MOSFETs P-CHANNEL 20V PowerPAK 1212-8S |
auf Bestellung 36825 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS63DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 35.1/127.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V |
auf Bestellung 2733 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS63DN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs P-CHANNEL 20V PowerPAK 1212-8S
MOSFETs P-CHANNEL 20V PowerPAK 1212-8S
auf Bestellung 36825 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.83 EUR |
| 3000+ | 0.77 EUR |
| SISS63DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V
Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V
auf Bestellung 2733 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 13+ | 1.71 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |