SIZ348DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.73 EUR |
| 6000+ | 0.7 EUR |
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Technische Details SIZ348DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.7W (Ta), 16.7W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Weitere Produktangebote SIZ348DT-T1-GE3 nach Preis ab 0.76 EUR bis 2.53 EUR
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SIZ348DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.7W (Ta), 16.7W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ348DT-T1-GE3 | Vishay / Siliconix |
MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 |
auf Bestellung 4219 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIZ348DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.78 EUR |
| 13+ | 1.45 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.78 EUR |
| SIZ348DT-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3
MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3
auf Bestellung 4219 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 1.57 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.78 EUR |
| 3000+ | 0.76 EUR |