SIZ350DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details SIZ350DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 18.5A 8PWR33, Supplier Device Package: 8-Power33 (3x3), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V, Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.7W (Ta), 16.7W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIZ350DT-T1-GE3 nach Preis ab 0.77 EUR bis 3.04 EUR
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SIZ350DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 18.5A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
auf Bestellung 7529 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ350DT-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 16V Vgs PowerPAIR 3 x 3 |
auf Bestellung 14016 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIZ350DT-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 7529 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 13+ | 1.43 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.77 EUR |
| SIZ350DT-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 16V Vgs PowerPAIR 3 x 3
MOSFETs 30V Vds 16V Vgs PowerPAIR 3 x 3
auf Bestellung 14016 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.95 EUR |
| 3000+ | 0.85 EUR |