SIZ720DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
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Technische Details SIZ720DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 6-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W, 48W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 16A, Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V, Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-PowerPair™.
Weitere Produktangebote SIZ720DT-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SIZ720DT-T1-GE3 | Vishay / Siliconix |
MOSFET N-CHANNEL 20-V (D-S) MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIZ720DT-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 20-V (D-S) MOSFET
MOSFET N-CHANNEL 20-V (D-S) MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH


