SIZ904DT-T1-GE3 Vishay Siliconix

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/33W, Polarisation: unipolar, Case: PowerPAIR® 3x3, Kind of channel: enhancement, Type of transistor: N-MOSFET x2, Kind of package: reel; tape, Mounting: SMD, Technology: TrenchFET®, Gate-source voltage: ±20V, Gate charge: 12/23nC, Drain current: 12/16A, On-state resistance: 30/17mΩ, Power dissipation: 20/33W, Drain-source voltage: 30V, Pulsed drain current: 30...40A.