Technische Details SIZ904DT-T1-GE3 Vishay Siliconix
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/33W, Polarisation: unipolar, Case: PowerPAIR® 3x3, Kind of channel: enhancement, Type of transistor: N-MOSFET x2, Kind of package: reel; tape, Mounting: SMD, Technology: TrenchFET®, Gate-source voltage: ±20V, Gate charge: 12/23nC, Drain current: 12/16A, On-state resistance: 30/17mΩ, Power dissipation: 20/33W, Drain-source voltage: 30V, Pulsed drain current: 30...40A.
Weitere Produktangebote SIZ904DT-T1-GE3
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SIZ904DT-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 12A POWERPAIR |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ904DT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 |
Produkt ist nicht verfügbar |
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| SIZ904DT-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/33W Polarisation: unipolar Case: PowerPAIR® 3x3 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Gate-source voltage: ±20V Gate charge: 12/23nC Drain current: 12/16A On-state resistance: 30/17mΩ Power dissipation: 20/33W Drain-source voltage: 30V Pulsed drain current: 30...40A |
Produkt ist nicht verfügbar |