Weitere Produktangebote SIZ920DT-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SIZ920DT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 40A 8POWERPAIRSupplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 30V Power - Max: 39W, 100W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
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SIZ920DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 30V Power - Max: 39W, 100W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIZ920DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 39W, 100W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 39W, 100W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIZ920DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 39W, 100W
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 39W, 100W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH