SIZF360DT-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 4 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.3 EUR |
| 3000+ | 1.23 EUR |
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Technische Details SIZF360DT-T1-GE3 Vishay Semiconductors
Description: MOSFET DL N-CH 30V PPAIR 3X3FDC, Part Status: Active, Supplier Device Package: 6-PowerPair™, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Schottky, Mounting Type: Surface Mount, Package / Case: 6-PowerPair™, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIZF360DT-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| SIZF360DT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET DL N-CH 30V PPAIR 3X3FDCGate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Mounting Type: Surface Mount Package / Case: 6-PowerPair™ Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 6-PowerPair™ Vgs(th) (Max) @ Id: 2.2V @ 250µA |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIZF360DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V PPAIR 3X3FDC
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Description: MOSFET DL N-CH 30V PPAIR 3X3FDC
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)