SJPL-D2VL Sanken Electric USA Inc.
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 1A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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Technische Details SJPL-D2VL Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 1A SJP, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, J-Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: SJP, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A, Current - Reverse Leakage @ Vr: 25 µA @ 200 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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SJPL-D2VL | Hersteller : Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 1A SJP Packaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
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