SK830321KL Panasonic Electronic Components
Hersteller: Panasonic Electronic Components
Description: MOSFET N-CH 30V 7A/18A 8HSSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 519µA
Supplier Device Package: HSSO8-F3-B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 658 pF @ 10 V
Description: MOSFET N-CH 30V 7A/18A 8HSSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 519µA
Supplier Device Package: HSSO8-F3-B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 658 pF @ 10 V
auf Bestellung 4979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.81 EUR |
100+ | 0.56 EUR |
500+ | 0.47 EUR |
1000+ | 0.4 EUR |
2000+ | 0.35 EUR |
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Technische Details SK830321KL Panasonic Electronic Components
Description: MOSFET N-CH 30V 7A/18A 8HSSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 3V @ 519µA, Supplier Device Package: HSSO8-F3-B, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 658 pF @ 10 V.
Weitere Produktangebote SK830321KL
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SK830321KL | Hersteller : Panasonic Electronic Components |
Description: MOSFET N-CH 30V 7A/18A 8HSSO Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 3V @ 519µA Supplier Device Package: HSSO8-F3-B Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 658 pF @ 10 V |
Produkt ist nicht verfügbar |
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SK830321KL | Hersteller : Panasonic | MOSFET 30V Dual N-ch Power MOSFET 3.3x3.25mm |
Produkt ist nicht verfügbar |