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SK8403190L

SK8403190L Panasonic Electronic Components

SK8403190L.pdf Hersteller: Panasonic Electronic Components
Description: MOSFET N-CH 30V 10A 8HSSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1.01mA
Supplier Device Package: HSSO8-F1-B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 10 V
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1 EUR
Mindestbestellmenge: 16
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Technische Details SK8403190L Panasonic Electronic Components

Description: MOSFET N-CH 30V 10A 8HSSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V, Power Dissipation (Max): 2W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 3V @ 1.01mA, Supplier Device Package: HSSO8-F1-B, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 10 V.

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SK8403190L SK8403190L Hersteller : Panasonic SK8403190L.pdf MOSFET 30V N-ch Power MOSFET 3.3x3.25mm
auf Bestellung 3025 Stücke:
Lieferzeit 14-28 Tag (e)
SK8403190L SK8403190L Hersteller : Panasonic Electronic Components SK8403190L.pdf Description: MOSFET N-CH 30V 10A 8HSSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1.01mA
Supplier Device Package: HSSO8-F1-B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 10 V
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