SKI06106 Sanken
Hersteller: Sanken
Description: MOSFET N-CH 60V 57A TO263
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Produktrezensionen
Produktbewertung abgeben
Technische Details SKI06106 Sanken
Description: MOSFET N-CH 60V 57A TO263, Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 2.5V @ 650µA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote SKI06106
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
SKI06106 | Hersteller : Sanken |
Description: MOSFET N-CH 60V 57A TO263 Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 2.5V @ 650µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28.5A, 10V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |