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SKIIP13NEB066V1 Semikron



Hersteller: Semikron
Силові IGBT-модулі
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Technische Details SKIIP13NEB066V1 Semikron

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Max. off-state voltage: 0.6kV, Collector current: 43A, Case: MiniSKiiP® 1, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Mechanical mounting: screw.

Weitere Produktangebote SKIIP13NEB066V1

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SKIIP 13NEB066V1 25231430 SEMIKRON DANFOSS SEMIKRON_Product_Variants.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 43A
Case: MiniSKiiP® 1
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SKIIP 13NEB066V1 25231430 SEMIKRON_Product_Variants.pdf
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 43A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 43A
Case: MiniSKiiP® 1
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH