Technische Details SKIIP35NAB12T4V1 SEMIKRON
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 50A, Case: MiniSKiiP® 3, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Mechanical mounting: screw, Power: 15kW.
Weitere Produktangebote SKIIP35NAB12T4V1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SKIIP 35NAB12T4V1 25231470 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: MiniSKiiP® 3 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Pulsed collector current: 150A Mechanical mounting: screw Power: 15kW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 48 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SKIIP 35NAB12T4V1 25231470 |
|
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: MiniSKiiP® 3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Power: 15kW
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: MiniSKiiP® 3
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Power: 15kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen
Stück im Wert von UAH