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SKM100GB176D 22890855

SKM100GB176D 22890855 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CD145EBECE0469&compId=SKM100GB176D.pdf?ci_sign=aa6d4b3d5dd4b60b236e6e0ff65b5173cb213cfe Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Topology: IGBT half-bridge
Electrical mounting: FASTON connectors; screw
Version: D61
Case: SEMITRANS2
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+132.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SKM100GB176D 22890855 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A, Topology: IGBT half-bridge, Electrical mounting: FASTON connectors; screw, Version: D61, Case: SEMITRANS2, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 150A, Max. off-state voltage: 1.7kV, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKM100GB176D 22890855 nach Preis ab 132.73 EUR bis 132.73 EUR

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Preis
SKM100GB176D 22890855 SKM100GB176D 22890855 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CD145EBECE0469&compId=SKM100GB176D.pdf?ci_sign=aa6d4b3d5dd4b60b236e6e0ff65b5173cb213cfe Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Topology: IGBT half-bridge
Electrical mounting: FASTON connectors; screw
Version: D61
Case: SEMITRANS2
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.7kV
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+132.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH