Produkte > SEMIKRON DANFOSS > SKM300GB066D 21915520
SKM300GB066D 21915520

SKM300GB066D 21915520 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9E82145414FDA0C7&compId=SKM300GB066D.pdf?ci_sign=19f4c1d49c6d940b6af153868a7a1590292de53b Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Electrical mounting: FASTON connectors; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Case: SEMITRANS3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+316.6 EUR
3+279.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SKM300GB066D 21915520 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Electrical mounting: FASTON connectors; screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Max. off-state voltage: 0.6kV, Case: SEMITRANS3, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKM300GB066D 21915520 nach Preis ab 279.28 EUR bis 316.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SKM300GB066D 21915520 SKM300GB066D 21915520 Hersteller : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9E82145414FDA0C7&compId=SKM300GB066D.pdf?ci_sign=19f4c1d49c6d940b6af153868a7a1590292de53b Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Electrical mounting: FASTON connectors; screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Case: SEMITRANS3
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+316.6 EUR
3+279.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH