SKM300GB126D
Produktcode: 48867
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Hersteller:
Verschiedene Bauteile > Verschiedene Bauteile 2
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Technische Details SKM300GB126D
- IGBT MODULE, DUAL, 1200V
- Transistor Type:IGBT Module
- Max Voltage Vce Sat:2.15V
- Collector-to-Emitter Breakdown Voltage:1200V
- SVHC:No SVHC
- Av Current Ic:310A
- Case Style:SEMITRANS 3
- Current Temperature:25`C
- External Depth:61.4mm
- External Width:105mm
- Fixing Centres:93mm
- Fixing Hole Diameter:5.4mm
- Max Current Ic Continuous a:310A
- Max Current Ic Continuous b:200A
- No. of Transistors:2
- Pulsed Current Icm:400A
- Rise Time:110ns
- SMD Marking:SEMITRANS 3
- Termination Type:Screw
- Transistor Polarity:N Channel
- Voltage Vces:1200V
- Voltage:1200V
Weitere Produktangebote SKM300GB126D nach Preis ab 402.79 EUR bis 402.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
 |
SKM300GB126D 22890633 | SEMIKRON DANFOSS |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Topology: IGBT half-bridge Pulsed collector current: 400A Application: for UPS; Inverter; photovoltaics Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: SEMITRANS3 Gate-emitter voltage: ±20V Collector current: 200A Type of semiconductor module: IGBT Mechanical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SKM300GB126D 22890633 |
|
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: SEMITRANS3
Gate-emitter voltage: ±20V
Collector current: 200A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: SEMITRANS3
Gate-emitter voltage: ±20V
Collector current: 200A
Type of semiconductor module: IGBT
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 402.79 EUR |