SL2309A Shenzhen Slkormicro Semicon Co., Ltd.
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.082 EUR |
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Technische Details SL2309A Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
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SL2309A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 60 V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SL2309A |
|
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH