Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > SM6T100AHE3_A/H
SM6T100AHE3_A/H

SM6T100AHE3_A/H Vishay General Semiconductor - Diodes Division

sm6t.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137VC DO214AA
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 95V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 85.5V
Current - Peak Pulse (10/1000µs): 4.4A
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
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Technische Details SM6T100AHE3_A/H Vishay General Semiconductor - Diodes Division

Description: TVS DIODE 85.5VWM 137VC DO214AA, Voltage - Clamping (Max) @ Ipp: 137V, Voltage - Breakdown (Min): 95V, Unidirectional Channels: 1, Supplier Device Package: DO-214AA (SMBJ), Voltage - Reverse Standoff (Typ): 85.5V, Current - Peak Pulse (10/1000µs): 4.4A, Operating Temperature: -65°C ~ 150°C (TJ), Type: Zener, Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Power Line Protection: No, Power - Peak Pulse: 600W.