Technische Details SM8S33AHE3/2D
Description: TVS DIODE 33VWM 53.3VC DO218AB, Qualification: AEC-Q101, Grade: Automotive, Power Line Protection: No, Power - Peak Pulse: 6600W (6.6kW), Voltage - Clamping (Max) @ Ipp: 53.3V, Voltage - Breakdown (Min): 36.7V, Unidirectional Channels: 1, Supplier Device Package: DO-218AB, Voltage - Reverse Standoff (Typ): 33V, Current - Peak Pulse (10/1000µs): 124A, Operating Temperature: -55°C ~ 175°C (TJ), Type: Zener, Mounting Type: Surface Mount, Package / Case: DO-218AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote SM8S33AHE3/2D
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SM8S33AHE3/2D | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO218ABQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 6600W (6.6kW) Voltage - Clamping (Max) @ Ipp: 53.3V Voltage - Breakdown (Min): 36.7V Unidirectional Channels: 1 Supplier Device Package: DO-218AB Voltage - Reverse Standoff (Typ): 33V Current - Peak Pulse (10/1000µs): 124A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-218AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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SM8S33AHE3/2D | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO218ABPackaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 124A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |


