SMA5125 Sanken Electric Company, Ltd.
| Anzahl | Privatkunde |
|---|---|
| 18+ | 10.14 EUR |
| 21+ | 8.47 EUR |
| 50+ | 7.72 EUR |
| 100+ | 7.27 EUR |
| 200+ | 6.91 EUR |
| 500+ | 6.51 EUR |
| 1000+ | 6.12 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
18 Stücke
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Technische Details SMA5125 Sanken Electric Company, Ltd.
Description: MOSFET 3N/3P-CH 60V 10A 12SIP, Packaging: Tube, Package / Case: 12-SIP, Mounting Type: Through Hole, Configuration: 3 N and 3 P-Channel (3-Phase Bridge), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, 1200pF @ 10V, Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 12-SIP.
Weitere Produktangebote SMA5125
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SMA5125 | Sanken Electric USA Inc. |
 Description: MOSFET 3N/3P-CH 60V 10A 12SIPPackaging: Tube Package / Case: 12-SIP Mounting Type: Through Hole Configuration: 3 N and 3 P-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, 1200pF @ 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 12-SIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SMA5125 |
|
Hersteller: Sanken Electric USA Inc.
Description: MOSFET 3N/3P-CH 60V 10A 12SIP
Packaging: Tube
Package / Case: 12-SIP
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 12-SIP
Description: MOSFET 3N/3P-CH 60V 10A 12SIP
Packaging: Tube
Package / Case: 12-SIP
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 12-SIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH