Technische Details SMB10J12AHE3/52 Vishay Semiconductors
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; DO214AA,SMB; SMB10J, Type of diode: TVS, Peak pulse power dissipation: 1kW, Max. off-state voltage: 12V, Breakdown voltage: 13.3V, Max. forward impulse current: 50.3A, Semiconductor structure: unidirectional, Case: DO214AA; SMB, Mounting: SMD, Leakage current: 5µA, Kind of package: 7 inch reel; tape, Application: automotive industry, Manufacturer series: SMB10J, Technology: TransZorb®, Features of semiconductor devices: glass passivated.
Weitere Produktangebote SMB10J12AHE3/52
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SMB10J12AHE3/52 | Vishay General Semiconductor - Diodes Division |
 Description: TVS DIODE 12VWM 19.9VC DO214AAQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 1000W (1kW) Voltage - Clamping (Max) @ Ipp: 19.9V Voltage - Breakdown (Min): 13.3V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 12V Current - Peak Pulse (10/1000µs): 50.3A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
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SMB10J12AHE3/52 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; DO214AA,SMB; SMB10J Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 50.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 5µA Kind of package: 7 inch reel; tape Application: automotive industry Manufacturer series: SMB10J Technology: TransZorb® Features of semiconductor devices: glass passivated |
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Im Einkaufswagen Stück im Wert von UAH |
| SMB10J12AHE3/52 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 50.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 12VWM 19.9VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 50.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMB10J12AHE3/52 |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; DO214AA,SMB; SMB10J
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 50.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: 7 inch reel; tape
Application: automotive industry
Manufacturer series: SMB10J
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; DO214AA,SMB; SMB10J
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 50.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: 7 inch reel; tape
Application: automotive industry
Manufacturer series: SMB10J
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH