SMB10J12AHE3_B/H Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 1.87 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 750+ | 0.54 EUR |
| 2250+ | 0.46 EUR |
| 4500+ | 0.43 EUR |
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Technische Details SMB10J12AHE3_B/H Vishay Semiconductors
Description: TVS DIODE 12VWM 19.9VC DO214AA, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: Telecom, Current - Peak Pulse (10/1000µs): 50.3A, Voltage - Reverse Standoff (Typ): 12V, Supplier Device Package: DO-214AA (SMB), Unidirectional Channels: 1, Voltage - Breakdown (Min): 13.3V, Voltage - Clamping (Max) @ Ipp: 19.9V, Power - Peak Pulse: 1000W (1kW), Power Line Protection: No, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SMB10J12AHE3_B/H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SMB10J12AHE3_B/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 19.9VC DO214AAPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 50.3A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMB10J12AHE3_B/H | Hersteller : Vishay General Semiconductor |
ESD Protection Diodes / TVS Diodes 1KW,12V 5%,UNIDIR,SMB TVS |
Produkt ist nicht verfügbar |
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| SMB10J12AHE3 B/H | Hersteller : Vishay | ESD Protection Diodes / TVS Diodes 1KW,12V 5%,UNIDIR,SMB TVS |
Produkt ist nicht verfügbar |
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| SMB10J12AHE3-B/H | Hersteller : Vishay | ESD Protection Diodes / TVS Diodes 1KW,12V 5%,UNIDIR,SMB TVS |
Produkt ist nicht verfügbar |

