SMB10J14A-E3/52 Vishay General Semiconductor
auf Bestellung 43 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 1.72 EUR |
| 35+ | 1.52 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.92 EUR |
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Technische Details SMB10J14A-E3/52 Vishay General Semiconductor
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 1kW; 15.6V; 43.1A; unidirectional; SMB; reel,tape; SMBJ, Type of diode: TVS, Mounting: SMD, Kind of package: reel; tape, Case: SMB, Semiconductor structure: unidirectional, Leakage current: 1µA, Features of semiconductor devices: glass passivated, Manufacturer series: SMBJ, Peak pulse power dissipation: 1kW, Max. off-state voltage: 14V, Max. forward impulse current: 43.1A, Breakdown voltage: 15.6V, Technology: TransZorb®, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SMB10J14A-E3/52
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SMB10J14A-E3/52 | Hersteller : Vishay Semiconductor Diodes Division |
 Description: TVS DIODE 14VWM 23.2VC SMB |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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SMB10J14A-E3/52 | Hersteller : Vishay |
TVS Diode Single Uni-Dir 14V 1KW 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
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SMB10J14A-E3/52 | Hersteller : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1kW; 15.6V; 43.1A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: SMBJ Peak pulse power dissipation: 1kW Max. off-state voltage: 14V Max. forward impulse current: 43.1A Breakdown voltage: 15.6V Technology: TransZorb® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SMB10J14A-E3/52 | Hersteller : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1kW; 15.6V; 43.1A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: SMBJ Peak pulse power dissipation: 1kW Max. off-state voltage: 14V Max. forward impulse current: 43.1A Breakdown voltage: 15.6V Technology: TransZorb® |
Produkt ist nicht verfügbar |