SMBJ30CAHE3_A/I Vishay General Semiconductor
Hersteller: Vishay General Semiconductor
ESD Protection Diodes / TVS Diodes 600W 30V 5% SMB (DO-214AA)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.43 EUR |
| 3200+ | 0.36 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
7 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SMBJ30CAHE3_A/I Vishay General Semiconductor
Description: TVS DIODE 30VWM 48.4VC DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Current - Peak Pulse (10/1000µs): 12.4A, Voltage - Reverse Standoff (Typ): 30V, Supplier Device Package: DO-214AA (SMBJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 33.3V, Voltage - Clamping (Max) @ Ipp: 48.4V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SMBJ30CAHE3_A/I nach Preis ab 0.38 EUR bis 1.06 EUR
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SMBJ30CAHE3_A/I | Vishay Semiconductors |
ESD Protection Diodes / TVS Diodes 600W 30V 5% SMB (DO-214AA) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ30CAHE3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3V; 12.4A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Operating temperature: -55...150°C Technology: TransZorb® Number of channels: 1 |
auf Bestellung 102400 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 19200 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SMBJ30CAHE3_A/I |
|
Hersteller: Vishay Semiconductors
ESD Protection Diodes / TVS Diodes 600W 30V 5% SMB (DO-214AA)
ESD Protection Diodes / TVS Diodes 600W 30V 5% SMB (DO-214AA)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.42 EUR |
| 3200+ | 0.38 EUR |
| SMBJ30CAHE3_A/I |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.4A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Operating temperature: -55...150°C
Technology: TransZorb®
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.4A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Operating temperature: -55...150°C
Technology: TransZorb®
Number of channels: 1
auf Bestellung 102400 Stücke:
Lieferzeit 14-21 Tag (e)