SMBJ33CAHE3_B/I Vishay
auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6400+ | 0.25 EUR |
Produktrezensionen
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Technische Details SMBJ33CAHE3_B/I Vishay
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; bidirectional; ±5%; SMB; SMBJ, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 33V, Breakdown voltage: 36.7...40.6V, Max. forward impulse current: 11.3A, Semiconductor structure: bidirectional, Case: SMB, Mounting: SMD, Leakage current: 1µA, Manufacturer series: SMBJ, Tolerance: ±5%, Technology: TransZorb®, Features of semiconductor devices: glass passivated, Application: automotive industry, Kind of package: 13 inch reel; tape.
Weitere Produktangebote SMBJ33CAHE3_B/I nach Preis ab 0.26 EUR bis 1.09 EUR
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SMBJ33CAHE3_B/I | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: TVS DIODE 33VWM 53.3VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 11.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6100 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ33CAHE3_B/I | Hersteller : Vishay General Semiconductor |
ESD Protection Diodes / TVS Diodes 600W,33V 5%,BIDIR,SMB TVS |
auf Bestellung 6508 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ33CAHE3_B/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 11.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6100 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMBJ33CAHE3_B/I | Hersteller : Vishay |
ESD Suppressors / TVS Diodes 600W,33V 5%,BIDIR,SMB TVS |
auf Bestellung 6145 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ33CAHE3_B/I | Hersteller : Vishay |
Diode TVS Single Bi-Dir 33V 600W Automotive AEC-Q101 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
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| SMBJ33CAHE3_B/I | Hersteller : Vishay |
Diode TVS Single Bi-Dir 33V 600W Automotive AEC-Q101 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
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| SMBJ33CAHE3_B\I | Hersteller : Vishay | ESD Protection Diodes / TVS Diodes 600W,33V 5%,BIDIR,SMB TVS |
Produkt ist nicht verfügbar |
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| SMBJ33CAHE3_B/I | Hersteller : VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; bidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |