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SMBT3906SH6327XTSA1

SMBT3906SH6327XTSA1 Infineon Technologies

smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
Hersteller: Infineon Technologies
Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 330mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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AnzahlPreis
3915+0.12 EUR
Mindestbestellmenge: 3915 Stücke
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Technische Details SMBT3906SH6327XTSA1 Infineon Technologies

Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 330mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SOT363-PO, Part Status: Last Time Buy.

Weitere Produktangebote SMBT3906SH6327XTSA1

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SMBT3906SH6327XTSA1 SMBT3906SH6327XTSA1 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Produkt ist nicht verfügbar
 Mindestbestellmenge: 24000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBT3906SH6327XTSA1 SMBT3906SH6327XTSA1 Infineon Technologies Infineon_SMBT3906S_DataSheet_v01_00_EN-3363644.pdf Bipolar Transistors - BJT AF TRANSISTOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 24000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBT3906SH6327XTSA1 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT3906SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Mindestbestellmenge: 24000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMBT3906SH6327XTSA1 Infineon_SMBT3906S_DataSheet_v01_00_EN-3363644.pdf
SMBT3906SH6327XTSA1
Hersteller: Infineon Technologies
Bipolar Transistors - BJT AF TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 24000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH