SMBTA14E6327HTSA1 Infineon
Hersteller: Infineon
NPN 30V 300mA 330mW 125MHz SMBTA14E6327HTSA1 SMBTA14E6327 Infineon TSMBTA14
Anzahl je Verpackung: 500 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
Produktrezensionen
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Technische Details SMBTA14E6327HTSA1 Infineon
Description: TRANS NPN DARL 30V 0.3A PG-SOT23, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 300 mA, Part Status: Not For New Designs, Supplier Device Package: PG-SOT23, Frequency - Transition: 125MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SMBTA14E6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SMBTA14E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN DARL 30V 0.3A PG-SOT23 Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 300 mA Part Status: Not For New Designs Supplier Device Package: PG-SOT23 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
SMBTA14E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN DARL 30V 0.3A PG-SOT23 Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 300 mA Part Status: Not For New Designs Supplier Device Package: PG-SOT23 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SMBTA14E6327HTSA1 | Infineon Technologies |
Darlington Transistors AF Darlington NPN 30V 0.3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 18000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SMBTA14E6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Not For New Designs
Supplier Device Package: PG-SOT23
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 30V 0.3A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Not For New Designs
Supplier Device Package: PG-SOT23
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBTA14E6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Not For New Designs
Supplier Device Package: PG-SOT23
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN DARL 30V 0.3A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Not For New Designs
Supplier Device Package: PG-SOT23
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBTA14E6327HTSA1 |
|
Hersteller: Infineon Technologies
Darlington Transistors AF Darlington NPN 30V 0.3A
Darlington Transistors AF Darlington NPN 30V 0.3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
Im Einkaufswagen
Stück im Wert von UAH