Technische Details SMBYW01-200 ST
Description: DIODE GEN PURP 200V 1A SMB, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SMB, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 3 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V.
Weitere Produktangebote SMBYW01-200
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SMBYW01-200 | Hersteller : STM |
 СНЯТ С ПРОИЗВОДСТВА Група товару: Діоди та діодні збірки Од. вим: шт |
Produkt ist nicht verfügbar |
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SMBYW01-200 | Hersteller : STMicroelectronics |
Description: DIODE GEN PURP 200V 1A SMB Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SMB Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 3 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V |
Produkt ist nicht verfügbar |
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SMBYW01-200 | Hersteller : STMicroelectronics |
Description: DIODE GEN PURP 200V 1A SMB Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SMB Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
Produkt ist nicht verfügbar |
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SMBYW01-200 | Hersteller : STMicroelectronics |
Rectifiers 1.0 Amp 200 Volt |
Produkt ist nicht verfügbar |