SMCJ10AHE3/57T Vishay Semiconductor Diodes Division
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Technische Details SMCJ10AHE3/57T Vishay Semiconductor Diodes Division
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; TransZorb®, Max. off-state voltage: 10V, Semiconductor structure: unidirectional, Max. forward impulse current: 88.2A, Breakdown voltage: 11.1V, Leakage current: 5µA, Kind of package: 7 inch reel; tape, Type of diode: TVS, Features of semiconductor devices: glass passivated, Manufacturer series: SMCJ, Technology: TransZorb®, Peak pulse power dissipation: 1.5kW, Mounting: SMD, Case: SMC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SMCJ10AHE3/57T
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SMCJ10AHE3/57T | Hersteller : VISHAY |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; TransZorb® Max. off-state voltage: 10V Semiconductor structure: unidirectional Max. forward impulse current: 88.2A Breakdown voltage: 11.1V Leakage current: 5µA Kind of package: 7 inch reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Manufacturer series: SMCJ Technology: TransZorb® Peak pulse power dissipation: 1.5kW Mounting: SMD Case: SMC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SMCJ10AHE3/57T | Hersteller : Vishay Semiconductors |
ESD Suppressors / TVS Diodes 1.5KW 10V 5% Unidir AEC-Q101 Qualified |
Produkt ist nicht verfügbar |
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SMCJ10AHE3/57T | Hersteller : VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; TransZorb® Max. off-state voltage: 10V Semiconductor structure: unidirectional Max. forward impulse current: 88.2A Breakdown voltage: 11.1V Leakage current: 5µA Kind of package: 7 inch reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Manufacturer series: SMCJ Technology: TransZorb® Peak pulse power dissipation: 1.5kW Mounting: SMD Case: SMC |
Produkt ist nicht verfügbar |