SMCJ10AHE3/57T Vishay Semiconductor Diodes Division
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Technische Details SMCJ10AHE3/57T Vishay Semiconductor Diodes Division
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; TransZorb®, Manufacturer series: SMCJ, Technology: TransZorb®, Case: SMC, Features of semiconductor devices: glass passivated, Type of diode: TVS, Mounting: SMD, Semiconductor structure: unidirectional, Leakage current: 5µA, Max. forward impulse current: 88.2A, Max. off-state voltage: 10V, Breakdown voltage: 11.1V, Peak pulse power dissipation: 1.5kW, Kind of package: 7 inch reel; tape.
Weitere Produktangebote SMCJ10AHE3/57T
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SMCJ10AHE3/57T | Hersteller : Vishay Semiconductors |
 ESD Suppressors / TVS Diodes 1.5KW 10V 5% Unidir AEC-Q101 Qualified |
Produkt ist nicht verfügbar |
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SMCJ10AHE3/57T | Hersteller : VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; TransZorb® Manufacturer series: SMCJ Technology: TransZorb® Case: SMC Features of semiconductor devices: glass passivated Type of diode: TVS Mounting: SMD Semiconductor structure: unidirectional Leakage current: 5µA Max. forward impulse current: 88.2A Max. off-state voltage: 10V Breakdown voltage: 11.1V Peak pulse power dissipation: 1.5kW Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |