SMCJ33A-M3/9AT Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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Technische Details SMCJ33A-M3/9AT Vishay General Semiconductor - Diodes Division
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; DO214AB,SMC, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Max. off-state voltage: 33V, Breakdown voltage: 36.7...40.6V, Max. forward impulse current: 28.1A, Semiconductor structure: unidirectional, Case: DO214AB; SMC, Mounting: SMD, Leakage current: 1µA, Manufacturer series: SMCJ, Technology: TransZorb®, Features of semiconductor devices: glass passivated, Kind of package: 13 inch reel; tape.
Weitere Produktangebote SMCJ33A-M3/9AT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SMCJ33A-M3/9AT | Vishay General Semiconductor |
ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SMCJ33A-M3/9AT | Vishay Semiconductors |
ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SMCJ33A-M3\9AT | Vishay | ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SMCJ33A-M3/9AT | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SMCJ33A-M3/9AT |
|
Hersteller: Vishay General Semiconductor
ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS
ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ33A-M3/9AT |
|
Hersteller: Vishay Semiconductors
ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS
ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ33A-M3\9AT |
Hersteller: Vishay
ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS
ESD Protection Diodes / TVS Diodes 1.5KW,33V 5%,UNIDIR,SMC TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ33A-M3/9AT |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH