SMDA12C-4E3/TR7 Microchip Technology
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Technische Details SMDA12C-4E3/TR7 Microchip Technology
Description: TVS DIODE 12VWM 24VC 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 185pF @ 1MHz, Current - Peak Pulse (10/1000µs): 5A (8/20µs), Voltage - Reverse Standoff (Typ): 12V, Supplier Device Package: 8-SOIC, Bidirectional Channels: 4, Voltage - Breakdown (Min): 13.3V, Voltage - Clamping (Max) @ Ipp: 24V, Power - Peak Pulse: 300W, Power Line Protection: No.
Weitere Produktangebote SMDA12C-4E3/TR7
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SMDA12C-4e3/TR7 | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Protection diodes - arraysDescription: Diode: TVS array; 13.3V; 5A; 300W; SO8; reel,tape; ESD Semiconductor structure: bidirectional; quadruple independent Max. off-state voltage: 12V Case: SO8 Max. forward impulse current: 5A Breakdown voltage: 13.3V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.3kW Mounting: SMD Anzahl je Verpackung: 500 Stücke |
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SMDA12C-4e3/TR7 | Hersteller : Microchip Technology |
Description: TVS DIODE 12VWM 24VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 185pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: 8-SOIC Bidirectional Channels: 4 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 300W Power Line Protection: No |
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SMDA12C-4e3/TR7 | Hersteller : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS array 4 line Bi-dir, 300W (8/20us), Stand-off voltage = 12V |
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SMDA12C-4e3/TR7 | Hersteller : MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 13.3V; 5A; 300W; SO8; reel,tape; ESD Semiconductor structure: bidirectional; quadruple independent Max. off-state voltage: 12V Case: SO8 Max. forward impulse current: 5A Breakdown voltage: 13.3V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.3kW Mounting: SMD |
Produkt ist nicht verfügbar |