SMDB12TR

SMDB12TR SMC Diode Solutions


SMDB03%20THRU%20SMDB24%20N0425%20REV.A.pdf Hersteller: SMC Diode Solutions
Description: TVS DIODE 12V 19V 8SO
auf Bestellung 2500 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details SMDB12TR SMC Diode Solutions

Category: Transil diodes - arrays, Description: Diode: TVS array; 13.3V; 0.3kW; quadruple independent; SO8; Ch: 4, Type of diode: TVS array, Mounting: SMD, Case: SO8, Kind of package: reel; tape, Manufacturer series: SMDBxx, Semiconductor structure: quadruple independent, Breakdown voltage: 13.3V, Leakage current: 1µA, Number of channels: 4, Features of semiconductor devices: ESD protection, Peak pulse power dissipation: 0.3kW, Capacitance: 94pF, Max. off-state voltage: 12V, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SMDB12TR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SMDB12TR SMDB12TR Hersteller : SMC Diode Solutions SMDB03%20THRU%20SMDB24%20N0425%20REV.A.pdf Description: TVS DIODE 12V 19V 8SO
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SMDB12TR Hersteller : SMC DIODE SOLUTIONS SMDBxx.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 0.3kW; quadruple independent; SO8; Ch: 4
Type of diode: TVS array
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Manufacturer series: SMDBxx
Semiconductor structure: quadruple independent
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 4
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.3kW
Capacitance: 94pF
Max. off-state voltage: 12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SMDB12TR Hersteller : SMC DIODE SOLUTIONS SMDBxx.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 0.3kW; quadruple independent; SO8; Ch: 4
Type of diode: TVS array
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Manufacturer series: SMDBxx
Semiconductor structure: quadruple independent
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 4
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.3kW
Capacitance: 94pF
Max. off-state voltage: 12V
Produkt ist nicht verfügbar