SMMBT6521LT1G ON Semiconductor
auf Bestellung 207000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1724+ | 0.31 EUR |
| 10000+ | 0.27 EUR |
| 100000+ | 0.22 EUR |
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Technische Details SMMBT6521LT1G ON Semiconductor
Description: TRANS NPN 25V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 225 mW.
Weitere Produktangebote SMMBT6521LT1G nach Preis ab 0.22 EUR bis 1.39 EUR
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SMMBT6521LT1G | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 25V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 207000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMBT6521LT1G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 25V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMBT6521LT1G | Hersteller : onsemi |
Description: TRANS NPN 25V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 225 mW |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBT6521LT1G | Hersteller : onsemi |
Bipolar Transistors - BJT SS LN XSTR NPN 50V |
auf Bestellung 2602 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBT6521LT1G | Hersteller : onsemi |
Description: TRANS NPN 25V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 225 mW |
auf Bestellung 11893 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMMBT6521LT1G | Hersteller : ONSEMI |
Description: ONSEMI - SMMBT6521LT1G - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 615000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMBT6521LT1G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 25V 0.1A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SMMBT6521LT1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |