SMSD602-RT1G onsemi
Hersteller: onsemi
Description: TRANS NPN 50V 0.5A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
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Technische Details SMSD602-RT1G onsemi
Description: TRANS NPN 50V 0.5A SC-59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.
Weitere Produktangebote SMSD602-RT1G nach Preis ab 0.079 EUR bis 0.56 EUR
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SMSD602-RT1G | onsemi |
Description: TRANS NPN 50V 0.5A SC-59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 5880 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMSD602-RT1G | onsemi |
Bipolar Transistors - BJT SS SC59 GP XSTR NPN 25V |
auf Bestellung 9054 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMSD602-RT1G |
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Hersteller: onsemi
Description: TRANS NPN 50V 0.5A SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.5A SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| SMSD602-RT1G |
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Hersteller: onsemi
Bipolar Transistors - BJT SS SC59 GP XSTR NPN 25V
Bipolar Transistors - BJT SS SC59 GP XSTR NPN 25V
auf Bestellung 9054 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 0.47 EUR |
| 10+ | 0.3 EUR |
| 100+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.095 EUR |
| 9000+ | 0.083 EUR |
| 24000+ | 0.079 EUR |
