SMUN5111DW1T1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.1 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SMUN5111DW1T1G onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 385mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SMUN5111DW1T1G nach Preis ab 0.074 EUR bis 0.55 EUR
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SMUN5111DW1T1G | onsemi |
Digital Transistors LESHANBE SS BR XSTR |
auf Bestellung 26290 Stücke: Lieferzeit 10-14 Tag (e) |
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SMUN5111DW1T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 385mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 55540 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SMUN5111DW1T1G |
![]() |
Hersteller: onsemi
Digital Transistors LESHANBE SS BR XSTR
Digital Transistors LESHANBE SS BR XSTR
auf Bestellung 26290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.46 EUR |
| 12+ | 0.26 EUR |
| 100+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.088 EUR |
| 9000+ | 0.075 EUR |
| 24000+ | 0.074 EUR |
| SMUN5111DW1T1G |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 55540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 62+ | 0.35 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |

