Weitere Produktangebote SN7002NH6327XTSA2 nach Preis ab 0.051 EUR bis 0.75 EUR
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SN7002NH6327XTSA2 | Infineon Technologies |
 Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 52935 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 26µA Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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SN7002NH6327XTSA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 34659 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 26µA Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 111418 Stücke: Lieferzeit 10-14 Tag (e) |
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SN7002NH6327XTSA2 | Infineon Technologies |
MOSFETs N-Ch 60V 200mA SOT-23-3 |
auf Bestellung 34405 Stücke: Lieferzeit 10-14 Tag (e) |
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SN7002NH6327XTSA2 | INFINEON |
Description: INFINEON - SN7002NH6327XTSA2 - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 7.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.4V Verlustleistung: 360mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: SipMOS productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 7.5ohm |
auf Bestellung 6416 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5Ω |
auf Bestellung 9050 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SN7002NH6327XTSA2 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.081 EUR |
| 9000+ | 0.064 EUR |
| 24000+ | 0.06 EUR |
| SN7002NH6327XTSA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.082 EUR |
| 9000+ | 0.067 EUR |
| 24000+ | 0.062 EUR |
| SN7002NH6327XTSA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 52935 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1361+ | 0.13 EUR |
| 1491+ | 0.12 EUR |
| 1737+ | 0.099 EUR |
| 2000+ | 0.092 EUR |
| 3000+ | 0.084 EUR |
| 12000+ | 0.077 EUR |
| 24000+ | 0.071 EUR |
| SN7002NH6327XTSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 9000+ | 0.13 EUR |
| SN7002NH6327XTSA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 34659 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 621+ | 0.29 EUR |
| 1167+ | 0.15 EUR |
| 1439+ | 0.12 EUR |
| 1590+ | 0.11 EUR |
| 3000+ | 0.079 EUR |
| 6000+ | 0.069 EUR |
| 9000+ | 0.056 EUR |
| 15000+ | 0.055 EUR |
| 21000+ | 0.051 EUR |
| SN7002NH6327XTSA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 111418 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 49+ | 0.43 EUR |
| 68+ | 0.31 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| SN7002NH6327XTSA2 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 200mA SOT-23-3
MOSFETs N-Ch 60V 200mA SOT-23-3
auf Bestellung 34405 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.74 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.099 EUR |
| SN7002NH6327XTSA2 |
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Hersteller: INFINEON
Description: INFINEON - SN7002NH6327XTSA2 - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 7.5 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.4V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: SipMOS
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 7.5ohm
Description: INFINEON - SN7002NH6327XTSA2 - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 7.5 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.4V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: SipMOS
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 7.5ohm
auf Bestellung 6416 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 333+ | 0.75 EUR |
| 667+ | 0.35 EUR |
| 863+ | 0.25 EUR |
| 1163+ | 0.18 EUR |
| 1500+ | 0.17 EUR |
| SN7002NH6327XTSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5Ω
auf Bestellung 9050 Stücke:
Lieferzeit 14-21 Tag (e)