SN7002NH6327XTSA2 Infineon Technologies
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.085 EUR |
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Technische Details SN7002NH6327XTSA2 Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 26µA, Supplier Device Package: PG-SOT23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SN7002NH6327XTSA2 nach Preis ab 0.073 EUR bis 0.55 EUR
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SN7002NH6327XTSA2 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 53135 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 | Hersteller : Infineon Technologies |
MOSFET N-Ch 60V 200mA SOT-23-3 |
auf Bestellung 65165 Stücke: Lieferzeit 150-154 Tag (e) |
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SN7002NH6327XTSA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 26µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2764 Stücke: Lieferzeit 10-14 Tag (e) |
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SN7002NH6327XTSA2 | Hersteller : INFINEON |
Description: INFINEON - SN7002NH6327XTSA2 - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 2.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: SipMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.5ohm |
auf Bestellung 14950 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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SN7002NH6327XTSA2 Produktcode: 170646 |
Transistoren > MOSFET N-CH |
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SN7002NH6327XTSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SN7002NH6327XTSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Drain-source voltage: 60V Drain current: 0.2A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Anzahl je Verpackung: 5 Stücke |
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SN7002NH6327XTSA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 26µA Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SN7002NH6327XTSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Drain-source voltage: 60V Drain current: 0.2A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |