SNXH150B120H3Q2F2PG-N onsemi
Hersteller: onsemiDescription: GEN III Q2BOOST 1100V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 35-PIM (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 279 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19137 pF @ 20 V
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Technische Details SNXH150B120H3Q2F2PG-N onsemi
Description: GEN III Q2BOOST 1100V, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 3 Independent, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A, NTC Thermistor: Yes, Supplier Device Package: 35-PIM (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 279 W, Current - Collector Cutoff (Max): 400 µA, Input Capacitance (Cies) @ Vce: 19137 pF @ 20 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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SNXH150B120H3Q2F2PG-N | Hersteller : onsemi |
IGBT Modules GEN III Q2BOOST 1100V |
Produkt ist nicht verfügbar |